Improved EBSD resolution using CrossCourt

Introduction A nice example of how sensitivity and resolution is improved using CrossCourt to generate comparative Kernel Average Misorientation maps -or “KAM’s”. The KAM map has become a standard method for indicating small, relative differences in crystallographic orientation (angular misorientations) between neighboring points in the specimen. Traditional EBSD applications such as OIM by EDAX-TSL and INCA/AZtec by […]

Measuring Strain in a Semiconductor

Introduction One of the earliest examples of the use of CrossCourt and HR EBSD (High Resolution Electron Backscatter Diffraction) was measuring strain in semiconductor samples. In these cases the devices were strained over a very small range, about 1 micron across.   Fig 1. EBSD Pattern from Silicon   Technique Crosscourt uses cross-correlation techniques to […]

Tracking the electron source point

Introduction An accurate knowledge of the electron source point is essential for the interpretation of electron backscatter diffraction patterns. With the increasing adaptation of high angular resolution electron backscatter diffraction, HR EBSD, [1], for strain measurement, it has become even more important. To achieve the 1 part in 10000 precision possible in HR EBSD where […]